CY7C1329-100AI CYPRESS [Cypress Semiconductor], CY7C1329-100AI Datasheet - Page 7

• Manufacturer Part Number: CY7C1329-100AI
• Description: 64K x 32 Synchronous-Pipelined Cache RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 38-05279 Rev. *B
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
Electrical Characteristics
Parameter
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes:
X
OZ
DD
SB1
SB2
SB3
SB4
4. X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW.
5. The SRAM always initiates a Read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle DQ = High-Z when OE is inactive
7. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
8. T
DD
DDQ
OH
OL
IH
IL
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to three-state. OE
is a “don't care” for the remainder of the Write cycle.
or when the device is deselected, and DQ = data when OE is active.
A
is the case temperature.
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage
Current
V
Current
Automatic CS
Power-down
Current—TTL Inputs
Automatic CS
Power-down
Current—CMOS Inputs
Automatic CS
Power-down
Current—CMOS Inputs
Automatic CS
Power-down
Current—TTL Inputs
[7]
DD
[7]
.....................................−0.5V to V
Operating Supply
..................................−0.5V to V
Description
DD
Relative to GND.........−0.5V to +4.6V
[7]
Over the Operating Range
3.3V −5%/+10%
3.3V −5%/+10%
V
V
GND ≤ V
Input = V
Input = V
Input = V
GND ≤ V
V
f = f
Max. V
V
f = f
Max. V
V
f = 0
Max. V
V
f = f
Max. V
V
DD
DD
DD
IN
IN
IN
IN
MAX
MAX
MAX
≥ V
≤ 0.3V or V
≤ 0.3V or V
≥ V
= Max., I
= Min., I
= Min., I
DD
DD
DD
DD
IH
IH
= 1/t
= 1/t
= 1/t
I
SS
DDQ
SS
DDQ
I
, Device Deselected, or
, Device Deselected,
or V
, Device Deselected,
, Device Deselected,
or V
DDQ
DDQ
≤ V
≤ V
OH
OL
CYC
CYC
CYC
OUT
DDQ
DDQ,
IN
IN
+ 0.5V
+ 0.5V
IN
IN
= 8.0 mA
= −4.0 mA
≤ V
≤ V
> V
= 0 mA,
> V
Output Disabled
IL
IL
Test Conditions
DDQ
DDQ
, f = 0
– 0.3V,
– 0.3V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Commercial
Industrial
Range
10-ns cycle, 100 MHz
10-ns cycle, 100 MHz
All speeds
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
7.5-ns cycle, 133 MHz
7.5-ns cycle, 133 MHz
Ambient Temperature
-40°C to +85°C
0°C to +70°C
[3:0]
. Writes may occur only on subsequent clocks
3.135
3.135
Min.
–0.3
–30
2.4
2.0
−5
–5
−5
[8]
−5%/+10%
V
3.3V
V
DDQ
CY7C1329
DD
Max.
325
260
3.6
3.6
0.4
0.8
30
60
50
40
30
25
5
5
5
5
+ 0.3V
Page 7 of 15
−5%/+10%
V
3.3V
DDQ
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V