M58WR032FB60ZB6 STMICROELECTRONICS [STMicroelectronics], M58WR032FB60ZB6 Datasheet - Page 36

• Manufacturer Part Number: M58WR032FB60ZB6
• Description: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M58WR032FT, M58WR032FB
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
ble 14.
on the memory array condition. The best case is
when all the bits in the block or bank are at ‘0’ (pre-
programmed). The worst case is when all the bits
in the block or bank are at ‘1’ (not prepro-
Table 14. Program/Erase Times and Endurance Cycles
36/86
Erase
Program
Suspend Latency
Program/Erase
Cycles (per Block)
Exact erase times may change depending
(3)
Parameter
Parameter Block (4 KWord)
Main Block (32
KWord)
Bank (4Mbit)
Word
Parameter Block (4 KWord)
Main Block (32 KWord)
Program
Erase
Main Blocks
Parameter Blocks
Preprogrammed
Not Preprogrammed
Preprogrammed
Not Preprogrammed
Condition
Ta-
(2)
grammed). Usually, the system overhead is negli-
gible with respect to the erase time.
In the M58WR032FT/B the maximum number of
Program/ Erase cycles depends on the V
age supply used.
100,000
100,000
Min
Typ
256
0.3
0.8
1.1
4.5
10
32
3
5
5
Typical after
100k W/E
Cycles
10
1
3
Max
100
2.5
10
20
4
4
PP
cycles
cycles
Unit
ms
ms
µs
µs
µs
volt-
s
s
s
s
s