M58WR032FB60ZB6 STMICROELECTRONICS [STMicroelectronics], M58WR032FB60ZB6 Datasheet - Page 37

• Manufacturer Part Number: M58WR032FB60ZB6
• Description: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Note: 1. T
Erase
Program
Program/Erase
Cycles (per Block)
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
4. Measurements performed at 25°C. T
A
= –40 to 85°C; V
(3)
Parameter
DD
Parameter Block (4 KWord)
Main Block (32 KWord)
Bank (4Mbit)
Word/ Double Word/ Quadruple Word
Parameter Block
(4 KWord)
Main Block (32
KWord)
Bank (4Mbit)
Main Blocks
Parameter Blocks
= 1.7V to 2V; V
A
DDQ
= 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory Program.
Quad-Enhanced
Factory
Enhanced Factory
Quadruple Word
Word
Quad-Enhanced
Factory
Enhanced Factory
Quadruple Word
Word
Factory
Quadruple Word
= 1.7V to 2.24V.
Quad-Enhanced
Condition
(4)
(4)
(4)
(4)
(4)
Min
M58WR032FT, M58WR032FB
0.25
Typ
200
256
520
510
0.8
3.5
10
25
32
80
64
8
8
Typical after
100k W/E
Cycles
1000
2500
Max
100
2.5
4
cycles
cycles
Unit
37/86
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
µs
s
s
s