M58WR032FB60ZB6 STMICROELECTRONICS [STMicroelectronics], M58WR032FB60ZB6 Datasheet - Page 63

• Manufacturer Part Number: M58WR032FB60ZB6
• Description: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 33. Device Geometry Definition
Offset Word
Mode
2Ch
2Ah
2Bh
27h
28h
29h
2Dh
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
38h
2Eh
2Fh
30h
31h
32h
33h
34h
35h
38h
reserved
reserved
003Eh
003Eh
0016h
0001h
0000h
0000h
0000h
0002h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
Region 1 Information
Number of identical-size erase blocks = 003Eh+1
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
Region 2 Information
Number of identical-size erase blocks = 0007h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Reserved for future erase block region information
Region 1 Information
Number of identical-size erase block = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of identical-size erase block = 003Eh+1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
Reserved for future erase block region information
n
in number of bytes
Description
M58WR032FT, M58WR032FB
n
64 KByte
64 KByte
4 MByte
8 KByte
8 KByte
Async.
Value
x16
NA
NA
NA
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8
8
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