STM8S105C4B3 STMICROELECTRONICS [STMicroelectronics], STM8S105C4B3 Datasheet - Page 126

• Manufacturer Part Number: STM8S105C4B3
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Revision history
126/127
Date
Revision
Changes
Option
bytes to the option byte description table.
Added
Operating
power dissipation condition for T
and added ESR and ESL data in table "general operating
conditions".
Total current consumption in halt
of I
in powerdown mode, HSI clock after wakeup in the table "total
current consumption in halt mode at V
Low power mode wakeup
MHz) for the t
Internal clock sources and timing
"HSI oscillator characteristics", replaced min and max values
of "ACC
4 concerning further characterization of results.
Functional EMS (electromagnetic
replaced with IEC 61000.
Designing hardened software to avoid noise
1000 replaced with IEC 61000.
Electromagnetic interference
with IEC61967-2.
Thermal
junction ambient temperature of LQFP32 7X7 mm from 59 °C
to 60 °C in the thermal characteristics table.
Added
Added
DocID14771 Rev 9
DD(H)
Unique ID
32-lead UFQFPN package mechanical
STM8S105 FASTROM microcontroller option
bytes: added description of STM8L bootloader option
HSI
at 85 °C from 20 µA to 25 µA for the condition "Flash
characteristics: Replaced the thermal resistance
conditions: added introductory text; removed low
factory calibrated parameter" and removed footnote
WU(WFI)
parameter in the table "wakeup times".
times: added first condition (0 to 16
(EMI): SAE J 1752/3 replaced
A
, replaced "C
mode: replaced max value
characteristics: In the table
susceptibility): IEC 1000
DD
= 5 V.
problems: IEC
EXT
data.
STM8S105xx
" by "VCAP",
list.