FDD8447L_08 FAIRCHILD [Fairchild Semiconductor], FDD8447L_08 Datasheet

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FDD8447L_08

Manufacturer Part Number
FDD8447L_08
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDD8447L_08.pdf (6 pages)
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev.C3
FDD8447L
40V N-Channel PowerTrench
40V, 50A, 8.5mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
I
E
P
T
R
R
R
D
S
DS
GS
AS
D
J
θJC
θJA
θJA
Max r
Max r
Fast Switching
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD8447L
DS(on)
DS(on)
= 8.5mΩ at V
= 11.0mΩ at V
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Max Pulse Diode Current
Drain-Source Avalanche Energy
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
S
GS
GS
(TO -252)
= 10V, I
D -PA K
T O -2 52
= 4.5V, I
FDD8447L
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Device
D
D
= 14A
= 11A
T
D
T
C
T
T
C
A
A
= 25°C unless otherwise noted
= 25°C
= 25°C
= 25°C
Parameter
D-PAK(TO-252)
Package
1
®
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low r
superior performance benefit in the application.
Applications
MOSFET
Inverter
Power Supplies
T
T
T
C
C
A
= 25°C
= 25°C
= 25°C
Reel Size
DS(on)
13’’
G
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 3)
and optimized BV
Tape Width
D
S
12mm
-55 to +150
Ratings
±20
15.2
100
100
153
1.3
3.1
2.8
DSS
40
50
57
44
40
96
capability to offer
®
technology to
www.fairchildsemi.com
2500 units
Quantity
May 2008
Units
°C/W
mJ
°C
W
V
V
A
A

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FDD8447L_08 Summary of contents

Page 1

FDD8447L 40V N-Channel PowerTrench 40V, 50A, 8.5mΩ Features Max r = 8.5mΩ 10V, I DS(on) GS Max r = 11.0mΩ 4.5V, I DS(on) GS Fast Switching RoHS Compliant - ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics (Note 2) V ...

Page 3

Typical Characteristics 100 V = 10V 4. 6.0V 4. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 14A 10V GS 1.4 1.2 ...

Page 4

Typical Characteristics 14A GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 1000 100 R LIMIT DS(ON) 10 100ms 10V ...

Page 5

Typical Characteristics 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE 0.001 0.0001 0.001 Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on ...

Page 6

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ ...

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