FDD8447L_08 FAIRCHILD [Fairchild Semiconductor], FDD8447L_08 Datasheet - Page 2

• Manufacturer Part Number: FDD8447L_08
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

FDD8447L Rev.C3
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25 o C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
4
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
I
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
DS(on)
S
rr
FS
GS(th)
iss
oss
rss
g
∆T
∆T
g(TOT)
g(TOT)
gs
gd
SD
rr
Symbol
R
a. 40°C/W when mounted on a 1 in
b. 96°C/W when mounted on a minimum pad.
DSS
θJA
θJC
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge, V
Total Gate Charge, V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Transconductance
(Note 2)
2
--------------- -
Parameter
θJA
pad of 2 oz copper
is determined by the user’s board design.
GS
GS
= 10V
= 5V
T
J
= 25°C unless otherwise noted
V
V
V
V
V
f = 1MHz
f = 1MHz
V
I
V
V
V
I
I
V
V
V
I
V
D
D
D
F
DD
GS
DD
GS
GS
GS
GS
GS
DS
GS
DS
GS
DS
= 14A, di/dt = 100A/µs
= 250µA, referenced to 25°C
= 250µA, V
= 250µA, referenced to 25°C
= 10V
= 20V, V
= 20V, I
= 10V, R
= 20V, I
= 32V, V
= V
= 10V, I
= 4.5V, I
= 10V, I
= 0V, I
= ±20V, V
= 5V, I
2
DS
Test Conditions
, I
S
D
D
D
D
D
D
= 14A
D
GS
GEN
GS
= 14A
= 1A
= 14A
= 14A
= 14A, T
GS
GS
= 11A
= 250µA
= 0V,
= 0V
= 0V
= 0V
= 6Ω
J
(Note 2)
(Note 1a)
=125°C
1.0
Min
40
1970
1.27
250
150
Typ
1.9
8.5
10.4
7.0
12
12
38
37
20
0.8
22
11
-5
58
35
9
6
7
11.0
14.0
±100
Max
3.0
8.5
1.2
21
21
61
18
52
28
2.6
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1
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
Ω
A
ns
nC
V
V
V
S