FDMC7660_12 FAIRCHILD [Fairchild Semiconductor], FDMC7660_12 Datasheet
FDMC7660_12
Manufacturer Part Number
FDMC7660_12
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDMC7660_12.pdf
(7 pages)
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC7660
N-Channel PowerTrench
30 V, 20 A, 2.2 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
Symbol
Device Marking
STG
FDMC7660
DS(on)
DS(on)
= 2.2 mΩ at V
= 3.3 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMC7660
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 33
D
D
= 20 A
= 18 A
T
®
C
D
= 25°C unless otherwise noted
MOSFET
Parameter
D
DS(on)
D
Power 33
D
Package
Bottom
S
1
S
T
T
T
T
T
Pin 1
C
C
C
General Description
This
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
A
A
S
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
G
N-Channel
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1a)
S
S
S
G
(Note 4)
(Note 3)
MOSFET
Tape Width
12 mm
is produced using Fairchild
-55 to + 150
Ratings
±20
100
200
200
2.3
30
40
20
41
53
3
®
process that has
www.fairchildsemi.com
3000 units
Quantity
June 2012
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A
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FDMC7660_12 Summary of contents
Page 1
FDMC7660 N-Channel PowerTrench 2.2 mΩ Features Max r = 2.2 mΩ DS(on) GS Max r = 3.3 mΩ 4 DS(on) GS High performance technology for ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
Page 3
Typical Characteristics 200 PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 150 100 ...
Page 4
Typical Characteristics GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics ...
Page 5
Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC7660 Rev. 25°C unless otherwise ...
Page 6
Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 6 www.fairchildsemi.com ...
Page 7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ ® AccuPower™ FRFET AX-CAP™* Global Power ...