FDMC7660_12 FAIRCHILD [Fairchild Semiconductor], FDMC7660_12 Datasheet - Page 2

• Manufacturer Part Number: FDMC7660_12
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
Notes:
1. R
2. Pulse Test: Pulse Width < 300
3. Starting T
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
R
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
θJA
θJC
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25 °C, L = 1 mH, I
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
μ
AS
s, Duty cycle < 2.0%.
= 20 A, V
θJA
Parameter
is determined by the user’s board design.
DD
= 27 V, V
a.
T
J
53 °C/W when mounted on a
1 in
GS
= 25°C unless otherwise noted
2
= 10 V
pad of 2 oz copper
V
V
V
V
V
f = 1MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 20 A, di/dt = 100 A/μs
= 250 μA, referenced to 25°C
= 250 μA, V
= 250 μA, referenced to 25°C
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 15 V, V
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 20 A
= 1.9 A
D
= 20 A
GS
GEN
GS
DS
= 250 μA
GS
= 20 A,
= 20 A, T
= 20 A
= 18 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 20 A
= 15 V,
J
(Note 2)
(Note 2)
= 125°C
b.
Min
1.2
30
125 °C/W when mounted on
a minimum pad of 2 oz copper
3630
1345
110
163
0.9
0.8
0.7
Typ
1.7
1.8
2.6
2.2
6.8
5.7
5.6
25
45
14
36
54
24
11
-6
14
4830
1790
Max
165
1.2
1.2
100
2.5
2.2
3.3
3.1
63
35
25
14
58
86
38
11
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1
mV/°C
mV/°C
Units
mΩ
pF
pF
pF
nC
ns
μA
nA
nC
nC
nC
nC
Ω
ns
ns
ns
ns
V
S
V
V