HV51V7403HGL-5 Hynix Semiconductor, HV51V7403HGL-5 Datasheet - Page 7

• Manufacturer Part Number: HV51V7403HGL-5
• Description: 4M x 4Bit EDO DRAM
• Manufacturer: Hynix Semiconductor

Rev.0.1/Apr.01
Write Cycle
Read-Modify-Write Cycle
Refresh cycle
( /CAS-before-/RAS Refresh Cycle)
( /CAS-before-/RAS Refresh Cycle)
( /CAS-before-/RAS Refresh Cycle)
( /CAS-before-/RAS Refresh Cycle)
( /CAS-before-/RAS Refresh Cycle)
Column address to /WE delay time
/RAS precharge to /CAS hold time
Write command to /RAS lead time
Write command to /CAS lead time
Read-modify-write cycle time
Write command set-up time
Write command pulse width
Write command hold time
/RAS to /WE delay time
/CAS to /WE delay time
/OE hold time from /WE
Data-in set-up time
Data-in hold time
/CAS set-up time
/WE setup time
/CAS hold time
/WE hold time
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
tWCS
tRWC
tCWD
t
t
t
tCSR
t
t
t
t
t
t
t
tWP
WCH
RWD
AWD
WRP
WRH
RWL
CWL
OEH
CHR
RPC
tDS
tDH
Min
Min
111
Min
67
30
42
13
10
0
8
8
8
8
0
8
5
8
0
5
-50
-50
-50
Max
Max
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Min
Min
136
10
10
10
10
10
79
34
49
15
10
10
0
0
5
0
5
HY51V(S)17403HG/HGL
-60
-60
-60
Max
Max
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Min
161
Min
13
10
13
13
13
92
40
57
18
10
10
0
0
5
0
5
-70
-70
-70
Max
Max
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Note
Note
14
15
15
14
14
14
7