HV51V7403HGL-5 Hynix Semiconductor, HV51V7403HGL-5 Datasheet - Page 8

• Manufacturer Part Number: HV51V7403HGL-5
• Description: 4M x 4Bit EDO DRAM
• Manufacturer: Hynix Semiconductor

Rev.0.1/Apr.01
EDO Page Mode Cycle
EDO Page Mode Read-Modify-Write Cycle
TEST Mode cycle
Self Refresh Mode(L-version)
EDO Page read-modify-write cycle time
/RAS hold time from /CAS precharge
Output data hold time from /CAS low
EDO mode read-modify-write cycle
/CAS precharge to /WE delay time
Access time from /CAS precharge
/RAS precharge time(self refresh)
/RAS pulse width (self refresh)
EDO mode /RAS pulse width
/CAS hold time referred /OE
/CAS hold time(self refresh)
Test mode /WE setup time
Read command hold time
Test mode /WE hold time
/CAS to /OE setup time
EDO mode cyle time
from /CAS precharge
Parameter
Parameter
Parameter
Parameter
tHPRWC
Symbol
Symbol
Symbol
Symbol
tRASP
tRASS
tRHCP
tRHCP
tDOH
tWTS
tHPC
tCOL
tCPW
tWTH
tCOP
tCHS
tACP
tRPS
Min
Min
Min
Min
100
-50
20
30
30
57
45
10
90
3
8
5
0
-
-
-50
-50
-50
-50
100K
Max
Max
Max
Max
30
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Min
Min
Min
100
110
-50
HY51V(S)17403HG/HGL
25
35
10
35
68
54
10
3
5
0
-
-
-60
-60
-60
-60
100K
Max
Max
Max
Max
35
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Min
Min
Min
100
130
-50
30
40
13
40
79
62
10
3
5
0
-
-
-70
-70
-70
-70
100K
Max
Max
Max
Max
40
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
9,17,19
Note
Note
Note
Note
20
16
14
9
8