LRS1341 Sharp, LRS1341 Datasheet - Page 20
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LRS1341
Manufacturer Part Number
LRS1341
Description
Stacked Chip 16M Flash Memory and 2M SRAM
Manufacturer
Sharp
Datasheet
1.LRS1341.pdf
(24 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
LRS1341/LRS1342
20
NOTES:
1. A write occurs during the overlap of a LOW S-CE
2. t
3. t
4. t
5. t
6. During this period, DQ pins are in the output state, therefore the input signals of
7. If S-CE
8. If S-CE
and S-WE going LOW. A write ends at the earliest transition among S-CE
S-CE
write to the end of write.
opposite phase to the outputs must not be applied.
A write begins at the latest transition among S-CE
of write.
after S-WE going LOW, the outputs remain in HIGH impedance state.
S-WE going HIGH, the outputs remain in HIGH impedance state.
CW
BW
AS
WR
is measured from the address valid to the beginning of write.
is measured from the time of going LOW S-UB or LOW S-LB to the end of write.
is measured from the later of S-CE
is measured from the end of write to the address change.
2
S-UB, S-LB
ADDRESS
going LOW and S-WE going HIGH. t
1
1
goes LOW or S-CE
goes HIGH or S-CE
S-CE
S-CE
S-WE
D
OUT
D
IN
1
2
2
2
goes HIGH simultaneously with S-WE going LOW or
goes LOW simultaneously with S-WE going HIGH or
Figure 12. Write Cycle Timing (S-UB, S-LB Controlled)
1
going LOW or S-CE
(NOTE 4)
WP
t
AS
is measured from the beginning of
1
, a HIGH S-CE
1
going LOW, S-CE
2
going HIGH to the end
2
t
t
AW
and a LOW S-WE.
WZ
2
(NOTE 6)
going HIGH
t
WC
(NOTE 2)
1
(NOTE 3)
going HIGH,
t
t
(NOTE 7)
CW
BW
t
WP
Stacked Chip (16M Flash & 2M SRAM)
t
DW
Data Valid
(NOTE 5)
t
WR
t
WR
(NOTE 8)
t
DH
t
OW
Data Sheet
LRS1342-11