HYS64D16000GU-8-A Infineon, HYS64D16000GU-8-A Datasheet - Page 17
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HYS64D16000GU-8-A
Manufacturer Part Number
HYS64D16000GU-8-A
Description
Unbuffered DDR SDRAM-Modules
Manufacturer
Infineon
Datasheet
1.HYS64D16000GU-8-A.pdf
(30 pages)
Table 7
Parameter
Device Supply Voltage
Output Supply Voltage
EEPROM supply voltage
Supply Voltage, I/O Supply
Voltage
Input Reference Voltage
I/O Termination Voltage
(System)
Input High (Logic1) Voltage
Input Low (Logic0) Voltage
Input Voltage Level,
CK and CK Inputs
Input Differential Voltage,
CK and CK Inputs
VI-Matching Pull-up
Current to Pull-down
Current
Input Leakage Current
Output Leakage Current
Output High Current,
Normal Strength Driver
Output Low
Current, Normal Strength
Driver
1) 0 C
2) Under all conditions,
3) Peak to peak AC noise on
4)
5)
6) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
7) Inputs are not recognized as valid until
8) Values are shown per component
Data Sheet
V
to
V
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
TT
ID
V
is the magnitude of the difference between the input level on CK and the input level on CK.
is not applied directly to the device.
REF
T
, and must track variations in the DC level of
A
Electrical Characteristics and DC Operating Conditions
70 C
V
DDQ
must be less than or equal to
V
Symbol
V
V
V
V
V
V
V
V
V
V
V
VI
I
I
I
I
REF
I
OZ
OH
OL
DD
DDQ
DDSPD
SS
SSQ
REF
TT
IH(DC)
IL(DC)
IN(DC)
ID(DC)
Ratio
,
may not exceed ± 2% V
Min.
2.3
2.3
2.3
0
0.49
V
V
–0.3
–0.3
0.36
0.71
–2
–5
—
16.2
V
V
REF
REF
REF
TT
is a system supply for signal termination resistors, is expected to be set equal
+ 0.15
– 0.04
stabilizes.
V
DDQ
V
Typ.
2.5
2.5
2.5
0.5
REF
Values
REF (DC)
V
.
17
DD
V
.
DDQ
. V
REF
Max.
2.7
2.7
3.6
0
0.51
V
V
V
V
V
1.4
2
5
–16.2
—
HYS[64/72]D[16000/32020]GU-[7/8]-A
REF
DDQ
REF
DDQ
DDQ
is also expected to track noise variations in
Unbuffered DDR SDRAM-Modules
+ 0.04 V
– 0.15 V
+ 0.3
+ 0.3
+ 0.6
V
DDQ
Unit Note/Test Condition
V
V
V
V
V
V
V
V
—
mA
mA
A
A
Electrical Characteristics
2)
—
—
3)
4)
7)
7)
7)
7)5)
6)
Any input 0 V
All other pins not under test
= 0 V
DQs are disabled;
0 V
V
V
OUT
OUT
= 1.95 V
= 0.35 V
7)8)
V
OUT
Rev. 1.02, 2003-11
V
7)
7)
DDQ
V
IN
7)
V
1)
V
DDQ
DD
;
.