HYS64V16300GU Infineon, HYS64V16300GU Datasheet - Page 11
![no-image](/images/no-image-200.jpg)
HYS64V16300GU
Manufacturer Part Number
HYS64V16300GU
Description
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
Manufacturer
Infineon
Datasheet
1.HYS64V16300GU.pdf
(20 pages)
INFINEON Technologies
Notes
3. All AC characteristics are shown on SDRAM component level.
4. AC timing tests have
5. If clock rising time is longer than 1 ns, a time (
6. Rated at 1.4 V
7. If
8. Anytime the Refresh Period has been exceeded, a minimum of two Auto-Refresh (CBR)
9. Timing is asynchronous. If setup time is not met by rising edge of the clock then the CKE signal
10.Self-Refresh Exit is a synchronous operation and begins on the second positive clock edge after
11.This is referenced to the time at which the output achieves the open circuit condition, not to
A Serial Presence Detect storage device—E
module configuration, speed, etc. is written into the E
Presence Detect protocol (I
An initial pause of 100 s is required after power-up, then a Precharge All Banks command must
be given followed by eight Auto-Refresh (CBR) cycles before the Mode Register Set Operation
can begin.
point. The transition time is measured between
t
with a 50 pF only, without any resistive termination and with a input signal of 1 V/ns edge rate
between 0.8 V and 2.0 V.
commands must be given to “wake-up” the device.
is assumed latched on the next cycle.
CKE returns high. Self-Refresh Exit is not complete until a time period equal to
after the Self Refresh Exit command is registered.
output voltage levels.
T
t
= 1 ns with the AC output load circuit show. Specified
T
is longer than 1 ns, a time (
CLOCK
INPUT
OUTPUT
t
IS
1.4 V
t
t
LZ
IH
t
AC
V
2
C synchronous 2-wire bus).
1.4 V
IL
t
CL
= 0.4 V and
t
t
OH
CH
t
T
t
t
AC
HZ
t
T
2.4 V
0.4 V
– 1) ns has to be added to this parameter.
IO.vsd
2
V
PROM—is assembled onto the module. Information about the
IH
1.4 V
= 2.4 V with the timing referenced to the 1.4 V crossover
2
PROM device during module production using a Serial
11
t
T
/2 – 0.5) ns must be added to this parameter.
V
IH
and
t
AC
HYS 64/72V16300/32220GU
V
Measurement conditions for
I/O
IL
and
. All AC measurements assume
t
OH
t
AC
parameters are measured
and
SDRAM-Modules
t
50 pF
OH
t
RC
is satisfied
9.01