AM29LV642D AMD [Advanced Micro Devices], AM29LV642D Datasheet - Page 3

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AM29LV642D

Manufacturer Part Number
AM29LV642D
Description
Manufacturer
AMD [Advanced Micro Devices]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29LV642DU90R
Manufacturer:
SAMSUNG
Quantity:
10 000
Am29LV642D
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O™ Control
DISTINCTIVE CHARACTERISTICS
■ Two 64 Megabit (Am29LV640D) in a single 64-ball 13
■ Two Chip Enable pins
■ Single power supply operation
■ VersatileI/O™ control
■ High performance
■ Manufactured on 0.23 µm process technology
■ CFI (Common Flash Interface) compliant
■ Ultra low power consumption (typical values at 3.0 V,
■ Flexible sector architecture
■ Sector Protection
■ Embedded Algorithms
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
This product has been retired and is not recommended for designs. For new designs, S29GL128N supersedes Am29LV642D. Please refer to the S29GL-N family data sheet for specifica-
tions and ordering information. Availability of this document is retained for reference and historical purposes only.
x 11 mm Fortified BGA package (Note: Features will
be described for each internal Am29LV640D)
— Two CE# pins to control selection of each internal
— 3.0 to 3.6 volt read, erase, and program operations
— Device generates data output voltages and tolerates
— Access times as fast as 90 ns
— Provides device-specific information to the system,
5 MHz) for the part
— 9 mA typical active read current
— 26 mA typical erase/program current
— 400 nA typical standby mode current
— Two hundred fifty-six 32 Kword sectors
— A hardware method to lock a sector to prevent
— Sectors can be locked in-system or via programming
— Temporary Sector Unprotect feature allows code
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically writes
Am29LV640D devices
data input voltages as determined by the voltage on
the V
allowing host software to easily reconfigure for
different Flash devices
program or erase operations within that sector
equipment
changes in previously locked sectors
preprograms and erases the entire chip or any
combination of designated sectors
and verifies data at specified addresses
DATA SHEET
IO
pin
Refer to AMD’s Website (www.amd.com) for the latest information.
■ Compatibility with JEDEC standards
■ Minimum 1 million erase cycle guarantee per sector
■ 64-ball Fortified BGA Package
■ Erase Suspend/Erase Resume
■ Data# Polling and toggle bits
■ Unlock Bypass Program command
■ Ready/Busy# pin (RY/BY#)
■ Hardware reset pin (RESET#)
■ ACC pin
■ Program and Erase Performance (V
■ 20-year data retention at 125°C
— Except for the additional CE2# pin, the Fortified BGA
— Superior inadvertent write protection
— Suspends an erase operation to read data from, or
— Provides a software method of detecting program or
— Reduces overall programming time when issuing
— Provides a hardware method of detecting program or
— Hardware method to reset the device for reading array
— Accelerates programming time for higher throughput
the ACC input pin)
— Word program time: 11 µs typical
— Sector erase time: 1.6 s typical for each 32 Kword
— Reliable operation for the life of the system
is pinout and software compatible with single-power
supply Flash
program data to, a sector that is not being erased,
then resumes the erase operation
erase operation completion
multiple program command sequences
erase cycle completion
data
during system production
sector
Publication# 25022
Issue Date: May 5, 2006
Rev: A Amendment: 2
HH
not applied to

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