AM29PDL310G73WHIN SPANSION [SPANSION], AM29PDL310G73WHIN Datasheet - Page 2

• Manufacturer Part Number: AM29PDL310G73WHIN
• Description: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

Am29PDL640G
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash
Memory with Enhanced VersatileIO
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ 64 Mbit Page Mode device
■ Single power supply operation
■ Simultaneous Read/Write Operation
■ FlexBank Architecture
■ Enhanced VersatileI/O
■ SecSi
■ Both top and bottom boot blocks in one device
■ Manufactured on 0.17 µm process technology
■ 20-year data retention at 125°C
■ Minimum 1 million erase cycle guarantee per sector
PERFORMANCE CHARACTERISTICS
■ High Performance
■ Power consumption (typical values at 10 MHz)
— Page size of 8 words: Fast page read access from random
— Full Voltage range: 2.7 to 3.1 volt read, erase, and program
— Data can be continuously read from one bank while
— Zero latency switching from write to read operations
— 4 separate banks, with up to two simultaneous operations
— Bank A: 8 Mbit (4 Kw x 8 and 32Kw x 15)
— Bank B: 24 Mbit (32 Kw x 48)
— Bank C: 24 Mbit (32 Kw x 48)
— Bank D: 8 Mbit (4 Kw x 8 and 32 Kw x 15)
— Output voltage generated and input voltages tolerated on all
— Up to 128 words accessible through a command sequence
— Page access times as fast as 25 ns
— Random access times as fast as 65 ns
— 25 mA active read current
— 15 mA program/erase current
— 0.2 µA typical standby mode current
locations within the page
operations for battery-powered applications
executing erase/program functions in another bank
per device
control inputs and I/Os is determined by the voltage on the
V
IO
TM
PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
pin
(Secured Silicon) Sector region
TM
(V
IO
) Control
TM
Control
SOFTWARE FEATURES
■ Software command-set compatible with JEDEC 42.4
■ CFI (Common Flash Interface) complaint
■ Erase Suspend / Erase Resume
■ Unlock Bypass Program command
HARDWARE FEATURES
■ Ready/Busy# pin (RY/BY#)
■ Hardware reset pin (RESET#)
■ WP#/ACC (Write Protect/Accelerate) input
■ Persistent Sector Protection
■ Password Sector Protection
■ Package options
standard
— Backward compatible with Am29F and Am29LV families
— Provides device-specific information to the system, allowing
— Suspends an erase operation to allow read or program
— Reduces overall programming time when issuing multiple
— Provides a hardware method of detecting program or erase
— Hardware method to reset the device to reading array data
— At V
— At V
— At V
— A command sector protection method to lock combinations
— Sectors can be locked and unlocked in-system at V
— A sophisticated sector protection method to lock
— 63-ball Fine-pitch BGA
— 80-ball Fine-pitch BGA
host software to easily reconfigure for different Flash devices
operations in other sectors of same bank
program command sequences
cycle completion
regardless of sector protect/unprotect status
setting
of individual sectors and sector groups to prevent program or
erase operations within that sector
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
IL
IH
HH
, protects the first and last two 4K word sectors,
, allows removal of sector protection
, provides faster programming times in a factory
Publication# 26573
Issue Date: February 26, 2003
Rev: B Amendment/+1
CC
level