AM29PDL310G73WHIN SPANSION [SPANSION], AM29PDL310G73WHIN Datasheet - Page 27

• Manufacturer Part Number: AM29PDL310G73WHIN
• Description: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

26
Addresses
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
3Ah
3Bh
3Ch
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
007Dh
0017h
0001h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
Data
Table 12. Device Geometry Definition
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
P R E L I M I N A R Y
Am29PDL640G
N
byte
Description
N
February 26, 2003