AM29PDL310G73WHIN SPANSION [SPANSION], AM29PDL310G73WHIN Datasheet - Page 55
AM29PDL310G73WHIN
Manufacturer Part Number
AM29PDL310G73WHIN
Description
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
Manufacturer
SPANSION [SPANSION]
Datasheet
1.AM29PDL310G73WHIN.pdf
(61 pages)
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AC CHARACTERISTICS
54
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
Addresses
RESET#
Figure 24. Alternate CE# Controlled Write (Erase/Program) Operation Timings
RY/BY#
WE#
Data
OE#
CE#
t
RH
555 for program
2AA for erase
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
t
P R E L I M I N A R Y
t
t
DS
PA for program
SA for sector erase
555 for chip erase
CP
CPH
t
AS
t
DH
Am29PDL640G
t
AH
OUT
PD for program
30 for sector erase
10 for chip erase
is the data written to the device.
t
BUSY
t
WHWH1 or 2
Data# Polling
DQ7#
PA
D
OUT
February 26, 2003
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