S71GL256NB0 SPANSION [SPANSION], S71GL256NB0 Datasheet - Page 100
S71GL256NB0
Manufacturer Part Number
S71GL256NB0
Description
Stacked Multi-chip Product (MCP)
Manufacturer
SPANSION [SPANSION]
Datasheet
1.S71GL256NB0.pdf
(147 pages)
- Current page: 100 of 147
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DC Characteristics (16Mb pSRAM Asynchronous)
100
I
DEEP SLEEP
I
Symbol
I
I
I
STANDBY
PAR 1/4
PAR 1/2
ACTIVE
V
V
V
V
V
I
I
LO
CC
OH
IH
IL
OL
IL
Power Supply
Input High Level
Input Low Level
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Operating Current
Standby Current
Deep Power Down Current
1/4 Array PAR Current
1/2 Array PAR Current
Parameter
OE = V
Performance Grade
Vin = 0 to V
I
I
I
I
I
I
OH
OH
OH
Conditions
V
V
IH
OL
OL
OL
V
CC
CC
CC
or Chip Disabled
= -1.0 mA
= -0.2 mA
= -0.5 mA
= 2.0 mA
= 0.2 mA
= 0.5 mA
= 3.3 V
= 3.0 V
= 3.3 V
A d v a n c e
Density
CC
pSRAM Type 1
Minimum
V
CC
-0.3
2.7
2.2
-0.4
I n f o r m a t i o n
16Mb pSRAM
Maximum
V
CC
-55
100
3.6
0.6
0.5
0.5
0.4
25
+ 0.3
x
x
x
Asynchronous
Units
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
Minimum
V
pSRAM_Type01_12_A1 August 30, 2004
CC
-0.3
2.7
2.2
-0.4
16Mb pSRAM
Maximum
V
-70
CC
100
0.4
3.6
0.6
0.5
0.5
25
+ 0.3
x
x
x
Units
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
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