AM49DL640BG25IS SPANSION [SPANSION], AM49DL640BG25IS Datasheet - Page 37

• Manufacturer Part Number: AM49DL640BG25IS
• Description: Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
• Manufacturer: SPANSION [SPANSION]

pSRAM DC & OPERATING CHARACTERISTICS
Notes:
1. V
2. V
36
Parameter
Symbol
I
I
V
I
CC1
CC2
V
V
V
I
I
DSB
CC
CC
I
LO
SB
LI
OH
OL
IH
IL
s
s
– 1.0 V for a 10 ns pulse width.
+ 1.0 V for a 10 ns pulse width.
Input Leakage Current
Output Leakage Current
Operating Current
Page Access Operating
Current
Output Low Voltage
Output High Voltage
Standby Current (CMOS)
Deep Power-down Standby
Input Low Voltage
Input High Voltage
Parameter Description
V
CE1#s = V
WE# = V
Cycle time = Min., I
CE1#s = V
t
Cycle time = Min., I
CE1#s = V
t
I
I
CE#1 = V
CE2 = 0.2 V
RC
PC
OL
OH
IN
= Min.
= 1.0 mA
= Min.
= –0.5 mA
= V
P R E L I M I N A R Y
SS
IL
CCS
to V
, V
IL
IL
Am49DL640BG
IH
, CE2s = V
, CE2s = V
, CE2s = V
Test Conditions
IO
– 0.2 V, CE2 = V
CC
= V
SS
IO
IO
to V
= 0 mA, 100% duty,
= 0 mA, 100% duty,
IH
IH
IL
, V
, V
CC
or OE# = V
IN
IN
= V
= V
CCS
IL
IL
= or V
= or V
– 0.2 V
IH
or
IH
IH
,
,
(Note 1)
–1.0
–1.0
–0.3
Min
2.4
2
Typ
(Note 2)
V
Max
1.0
1.0
0.4
0.4
0.3
March 8, 2002
40
25
70
CC
5
+
Unit
mA
mA
µA
µA
µA
µA
V
V
V
V