GS820E32AGT-133 GSI [GSI Technology], GS820E32AGT-133 Datasheet - Page 12
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GS820E32AGT-133
Manufacturer Part Number
GS820E32AGT-133
Description
64K x 32 2Mb Synchronous Burst SRAM
Manufacturer
GSI [GSI Technology]
Datasheet
1.GS820E32AGT-133.pdf
(21 pages)
Capacitance
(T
Note:
This parameter is sample tested.
AC Test Conditions
Notes:
1.
2.
3.
4.
Rev: 1.07 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Control Input Capacitance
Input Capacitance
Output Capacitance
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
V
SS
A
Undershoot Measurement and Timing
– 2.0 V
= 25°C, f = 1 MH
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
Output Load 2 for t
Device is deselected as defined by the Truth Table.
50%
V
V
SS
IH
Parameter
Parameter
LZ
Z
20% tKC
, V
, t
HZ
DD
, t
OLZ
= 3.3 V)
and t
OHZ
DQ
Conditions
Fig. 1& 2
Symbol
1 V/ns
1.25 V
1.25 V
0.2 V
2.3 V
C
Output Load 1
C
C
OUT
IN
I
12/21
VT = 1.25 V
50Ω
Test conditions
* Distributed Test Jig Capacitance
V
V
V
DD
V
DD
OUT
IN
30pF
+- 2.0 V
Overshoot Measurement and Timing
= 3.3 V
= 0 V
50%
V
= 0 V
V
DD
IL
*
GS820E32AT-180/166/133/4/5
20% tKC
Typ.
3
4
6
© 2000, GSI Technology
Max.
4
5
7
Unit
pF
pF
pF