HFD3N80 SEMIHOW [SemiHow Co.,Ltd.], HFD3N80 Datasheet - Page 5

• Manufacturer Part Number: HFD3N80
• Description: 800V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
-1
-2
1
0
Figure 7. Breakdown Voltage Variation
10
Figure 9. Maximum Safe Operating Area
0
-50
T
V
J
DS
, Junction Temperature [
vs Temperature
10
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1
※ Notes :
10
10
10
1. T
2. T
3. Single Pulse
-1
-2
10
0
C
J
= 150
= 25
-5
D=0.5
o
0.01
DS(on)
0.2
0.1
0.05
0.02
C
o
50
C
Figure 11. Transient Thermal Response Curve
10
(continued)
DC
2
100
10
10 ms
o
C]
single pulse
-4
※ Notes :
1 ms
1. V
2. I
t
1
D
GS
, Square Wave Pulse Duration [sec]
100 µs
= 250 μ A
150
= 0 V
10
10
3
-3
200
10
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
P
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
※ Notes :
10
DM
1. Z
2. Duty Factor, D=t
3. T
-1
-50
θ JC
JM
50
(t) = 1.78 ℃/ W Max.
- T
C
T
= P
t
T
J
1
, Junction Temperature [
C
t
DM
0
, Case Temperature [ ℃]
10
2
vs Temperature
vs Case Temperature
* Z
0
75
1
θ JC
/t
2
(t)
50
100
10
1
100
o
C]
◎ SEMIHOW REV.A0,Dec 2005
125
※ Notes :
1. V
2. I
150
D
GS
= 1.5 A
= 10 V
200
150