EN29GL128H-70BAIP EON [Eon Silicon Solution Inc.], EN29GL128H-70BAIP Datasheet - Page 21

• Manufacturer Part Number: EN29GL128H-70BAIP
• Description: 128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not
successfully completed. The device does not output a 1 on DQ5 if the system tries to program a 1 to a
location that was previously programmed to 0. Only an erase operation can change a 0 back to a 1.
Under this condition, the device ignores the bit that was incorrectly instructed to be programmed from a
0 to a 1, while any other bits that were correctly requested to be changed from 1 to 0 are programmed.
Attempting to program a 0 to a 1 is masked during the programming operation. Under valid DQ5
conditions, the system must write the reset command to return to the read mode (or to the erase-
suspend-read mode if a sector was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timeout State Indicator
After writing a sector erase command sequence, the output on DQ3 can be checked to determine
whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase
command.) When sector erase starts, DQ3 switches from “0” to “1”. This device does not support
multiple sector erase (continuous sector erase) command sequences so it is not very meaningful since
it immediately shows as a “1” after the first 30h command. Future devices may support this feature.
DQ1: Write to Buffer Abort
DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces
a “1”. The system must issue the “Write to Buffer Abort Reset” command sequence to return the device
to reading array data.
Table 5. Write Operation Status
Notes
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate
subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation
Writing Commands/Command Sequences
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing
an address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while
data is latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector or the
entire device. Table 3 indicates the address space that each sector occupies. The device address
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Standard
Program
Suspend
Suspend
Write to
Buffer
exceeded the maximum timing limits.
Erase
Mode
Mode
Mode
Suspend
Suspend
Program
Embedded Program Algorithm
Erase
Read
Read
Embedded Erase Algorithm
Erase Suspend Program
(Embedded Program)
Status
Abort(note 4)
Busy(note 3)
Program Suspended
Suspended Sector
Suspended Sector
Erase Suspended
Non-Program
Non-Erase
Sector
Sector
Rev. H, Issue Date: 2009/10/01
(note 2)
DQ7#
DQ7#
DQ7#
DQ7#
DQ7
0
1
21
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DQ6
No
©2004 Eon Silicon Solution, Inc.,
Invalid (Not allowed)
(note 1)
DQ5
0
0
0
0
0
0
Data
Data
DQ3
N/A
N/A
N/A
N/A
N/A
1
EN29GL128H/L
(note 2)
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DQ2
N/A
N/A
N/A
No
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DQ1
N/A
N/A
N/A
0
0
1
RY/BY#
0
0
1
1
1
0
0
0
0