EN29LV160 EON [Eon Silicon Solution Inc.], EN29LV160 Datasheet - Page 12

• Manufacturer Part Number: EN29LV160
• Description: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Hardware Data protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the following
hardware data protection measures prevent accidental erasure or programming, which might otherwise be
caused by false system level signals during Vcc power up and power down transitions, or from system
noise.
Low V
When Vcc is less than V
power up and power down. The command register and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored until Vcc is greater than V
provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than V
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE ,
Logical Inhibit
Write cycles are inhibited by holding any one of OE
cycle, CE and
logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE = V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
W E
.
CC
Write Inhibit
IL
, W E = V
W E
must be a logical zero while OE is a logical one. If CE ,
LKO
IL
and OE = V
, the device does not accept any write cycles. This protects data during Vcc
IH
, the device will not accept commands on the rising edge of
CE
Rev. A, Issue Date: 2004/03/30
12
or W E do not initiate a write cycle.
= VIL, CE = VIH, or
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
W E
= VIH. To initiate a write
LKO
W E
EN29LV160
. The system must
, and OE are all
LKO
.