EN29LV160 EON [Eon Silicon Solution Inc.], EN29LV160 Datasheet - Page 33

• Manufacturer Part Number: EN29LV160
• Description: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Parameter Description
Chip Programming
Table 15. ERASE AND PROGRAMMING PERFORMANCE
Table 16. LATCH UP CHARACTERISTICS
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 17. 48-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Table 18. DATA RETENTION
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Erase/Program Endurance
Parameter Symbol
Word Programming Time
Byte Programming Time
Input voltage with respect to V
Sector Erase Time
Chip Erase Time
Minimum Pattern Data Retention Time
Time
C
Input voltage with respect to V
C
Parameter
C
OUT
IN2
IN
Parameter Description
(including A9, Reset and OE )
Word
Byte
Vcc Current
Control Pin Capacitance
Parameter Description
Output Capacitance
Input Capacitance
ss
on all pins except I/O pins
100K
17.5
16.8
Typ
0.5
8.4
8
8
ss
on all I/O Pins
Limits
Max
50.4
25.2
300
300
10
Rev. A, Issue Date: 2004/03/30
33
Test Conditions
Test Setup
V
V
V
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
OUT
150°C
125°C
IN
IN
cycles
= 0
= 0
Unit
sec
sec
sec
= 0
µs
µs
-100 mA
-1.0 V
-1.0 V
Min
Excludes 00H programming prior
Excludes system level overhead
Typ
8.5
7.5
6
Minimum 100K cycles
Min
10
20
Comments
to erasure
EN29LV160
Max
7.5
12
9
Vcc + 1.0 V
100 mA
12.0 V
Max
Years
Years
Unit
Unit
pF
pF
pF