ATTINY26L8SU SL383 Atmel, ATTINY26L8SU SL383 Datasheet - Page 124

• Manufacturer Part Number: ATTINY26L8SU SL383
• Description: MCU 8-Bit ATtiny AVR RISC 2KB Flash 3.3V/5V 20-Pin SOIC T/R
• Manufacturer: Atmel

SPI Serial Programming
Algorithm
124
ATtiny26(L)
When writing serial data to the ATtiny26, data is clocked on the rising edge of SCK.
When reading data from the ATtiny26, data is clocked on the falling edge of SCK. See
Figure 68, Figure 69, and Table 69 for timing details.
To program and verify the ATtiny26 in the serial programming mode, the following
sequence is recommended (See four byte instruction formats in Table 61):
1. Power-up sequence:
2. Wait for at least 20 ms and enable serial programming by sending the Program-
3. The serial programming instructions will not work if the communication is out of
4. The Flash is programmed one page at a time. The page size is found in Table 52
5. The EEPROM array is programmed one byte at a time by supplying the address
6. Any memory location can be verified by using the Read instruction which returns
7. At the end of the programming session, RESET can be set high to commence
8. Power-off sequence (if needed):
Apply power between V
some systems, the programmer can not guarantee that SCK is held low during
Power-up. In this case, RESET must be given a positive pulse of at least two
CPU clock cycles duration after SCK has been set to “0”.
ming Enable serial instruction to pin MOSI.
synchronization. When in synchronize the second byte ($53), will echo back
when issuing the third byte of the Programming Enable instruction. Whether the
echo is correct or not, all 4 bytes of the instruction must be transmitted. If the $53
did not echo back, give RESET a positive pulse and issue a new Programming
Enable command.
on page 111. The memory page is loaded one byte at a time by supplying the 4
LSB of the address and data together with the Load Program Memory Page
instruction. To ensure correct loading of the page, the data low byte must be
loaded before data high byte is applied for given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the 6
MSB of the address. If polling is not used, the user must wait at least t
before issuing the next page. (See Table 60). Accessing the serial programming
interface before the Flash write operation completes can result in incorrect
programming.
and data together with the appropriate Write instruction. An EEPROM memory
location is first automatically erased before new data is written. If polling is not
used, the user must wait at least t
Table 60). In a chip erased device, no $FFs in the data file(s) need to be
programmed.
the content at the selected address at serial output MISO.
normal operation.
Set RESET to “1”.
Turn V
CC
power off.
CC
and GND while RESET and SCK are set to “0”. In
WD_EEPROM
before issuing the next byte. (See
1477J–AVR–06/07
WD_FLASH