LPC1111FHN33/203,5 NXP Semiconductors, LPC1111FHN33/203,5 Datasheet - Page 419
LPC1111FHN33/203,5
Manufacturer Part Number
LPC1111FHN33/203,5
Description
ARM Microcontrollers - MCU Cortex-M0 8kB flash up to 4 kB SRAM
Manufacturer
NXP Semiconductors
Datasheet
1.LPC1113FHN333035.pdf
(538 pages)
Specifications of LPC1111FHN33/203,5
Rohs
yes
Core
ARM Cortex M0
Processor Series
LPC1111
Data Bus Width
32 bit
Maximum Clock Frequency
50 MHz
Program Memory Size
8 KB
Data Ram Size
8 KB
On-chip Adc
Yes
Operating Supply Voltage
1.8 V to 3.6 V
Operating Temperature Range
- 65 C to + 150 C
Package / Case
HVQFN-33
Mounting Style
SMD/SMT
Interface Type
I2C, SPI, UART
Number Of Programmable I/os
42
Number Of Timers
4
Program Memory Type
Flash
Factory Pack Quantity
260
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NXP Semiconductors
UM10398
User manual
26.5.6 Prepare sector(s) for write operation <start sector number> <end
26.5.7 Copy RAM to flash <Flash address> <RAM address> <no of bytes>
sector number> (UART ISP)
This command makes flash write/erase operation a two step process.
Table 380. UART ISP Prepare sector(s) for write operation command
(UART ISP)
When writing to the flash, the following limitations apply:
Command
Input
Return Code
Description
Example
1. The smallest amount of data that can be written to flash by the copy RAM to flash
2. One page consists of 16 flash words (lines), and the smallest amount that can be
3. To avoid write disturbance (a mechanism intrinsic to flash memories), an erase should
command is 256 byte (equal to one page).
modified per flash write is one flash word (one line). This limitation follows from the
application of ECC to the flash write operation, see
be performed after following 16 consecutive writes inside the same page. Note that
the erase operation then erases the entire sector.
Remark: Once a page has been written to 16 times, it is still possible to write to other
pages within the same sector without performing a sector erase (assuming that those
pages have been erased previously).
P
Start Sector Number
End Sector Number: Should be greater than or equal to start sector number.
CMD_SUCCESS |
BUSY |
INVALID_SECTOR |
PARAM_ERROR
This command must be executed before executing "Copy RAM to flash" or "Erase
Sector(s)" command. Successful execution of the "Copy RAM to flash" or "Erase
Sector(s)" command causes relevant sectors to be protected again. The boot
block can not be prepared by this command. To prepare a single sector use the
same "Start" and "End" sector numbers.
"P 0 0<CR><LF>" prepares the flash sector 0.
All information provided in this document is subject to legal disclaimers.
Rev. 12 — 24 September 2012
Chapter 26: LPC111x/LPC11Cxx Flash programming firmware
Section
26.3.7.
UM10398
© NXP B.V. 2012. All rights reserved.
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