S34ML02G100BHI000 Spansion, S34ML02G100BHI000 Datasheet - Page 48
S34ML02G100BHI000
Manufacturer Part Number
S34ML02G100BHI000
Description
Flash 2Gb 3V 25ns NAND Flash
Manufacturer
Spansion
Datasheet
1.S34ML04G100BHI000.pdf
(76 pages)
Specifications of S34ML02G100BHI000
Rohs
yes
Memory Type
NAND Flash
Memory Size
2 Gbit
Timing Type
Asynchronous
Access Time
20 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-63
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S34ML02G100BHI000
Manufacturer:
ST
Quantity:
101
Part Number:
S34ML02G100BHI000
Manufacturer:
SPANSIO
Quantity:
20 000
6.10
6.11
48
Page Program Operation Timing with CE# Don’t Care
Page Program Operation with Random Data Input
Notes:
1. t
2. For EDC operation only one time Random Data Input is possible at same address.
WE#
CE#
CLE
ALE
RE#
I/Ox
R/B#
WE#
CLE
CE#
RE#
ALE
I/Ox
ADL
is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data cycle.
Input Command
Serial Data
80h
80h
tWC
Spansion
Column Address
Add1
Col.
Add. 1
Col.
Add2
Figure 6.10 Page Program Operation Timing with CE# Don’t Care
Col.
Add. 2
Col.
®
SLC NAND Flash Memory for Embedded
Row
Add1
Add. 1
tWC
Row
Row Address
Row
Add2
Add. 2
Row
Row
Add3
Add. 3
Row
Figure 6.11 Random Data Input
WE#
CE#
tADL
Din
N
D a t a
Din
N
Din
M
Input Command
N + 1
Random Data
Din
tCS
85h
tWP
tWC
S h e e t
Add1
tCH
Col.
Column Address
Din
M
Add2
Col.
CE# don’t care
tADL
Din
J
Serial Input
S34ML01G1_04G1_15 March 7, 2013
Din
K
Command
Program
10h
Din
P
tWB
P + 1
Din
tPROG
: Don’t Care
Din
R
70h
tWHR
Read Status
Command
10h
IO0