S34ML02G100BHI000 Spansion, S34ML02G100BHI000 Datasheet - Page 60

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S34ML02G100BHI000

Manufacturer Part Number
S34ML02G100BHI000
Description
Flash 2Gb 3V 25ns NAND Flash
Manufacturer
Spansion
Datasheet

Specifications of S34ML02G100BHI000

Rohs
yes
Memory Type
NAND Flash
Memory Size
2 Gbit
Timing Type
Asynchronous
Access Time
20 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-63

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Manufacturer
Quantity
Price
Part Number:
S34ML02G100BHI000
Manufacturer:
ST
Quantity:
101
Part Number:
S34ML02G100BHI000
Manufacturer:
SPANSIO
Quantity:
20 000
Company:
Part Number:
S34ML02G100BHI000
Quantity:
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Company:
Part Number:
S34ML02G100BHI000
Quantity:
20
60
Notes:
1. The block address bits must be the same except for the bit(s) that select the plane.
2. Read Status register (70h) is used in the figure. Read Status Enhanced (78h) can be also used.
RY/BY#
RY/BY#
R/B#
R/B#
WE#
WE#
CLE
CE#
ALE
RE#
CLE
CE#
ALE
RE#
IOx
IOx
1
1
Command Input
Command Input
80h
80h
Spansion
80h
80h
tWB
tWB
Add1
Col.
Column Address
Add1
Column Address
Col.
Address Input
Address Input
Add2
Col.
Add2
Col.
®
Figure 6.33 Multiplane Cache Program (ONFI 1.0 Protocol)
SLC NAND Flash Memory for Embedded
Return to 1
Repeat a max of 63 times
Add1
Row
Add1
Row
Row Address
Row Address
Add2
Row
Add2
Row
Add3
Row
Add3
Row
tADL
Data Input
Data Input
Din
N
Din
N
Din
M
Din
M
D a t a
11h
tWB
11h
11h
11h
tDBSY
tDBSY
t
t
DBSY
DBSY
S h e e t
80h
80h
80h
80h
tWC
tWC
Column Address
Add1
Add1
Column Address
Col.
Col.
Address Input
Address Input
Add2
Add2
Col.
Col.
Add1
Row
Add1
Row
S34ML01G1_04G1_15 March 7, 2013
Row Address
Row Address
Add2
Row
Add2
Row
Row
Add3
Add3
Row
tADL
Data Input
Data Input
Din
Din
N
N
Din
Din
M
M
15h
10h
10h
15h
tCBSYW
tPROG
t
t
CBSYW
70h
PROG
I/O
Q
1
1

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