IS42S16100E-7TL ISSI, Integrated Silicon Solution Inc, IS42S16100E-7TL Datasheet - Page 48
IS42S16100E-7TL
Manufacturer Part Number
IS42S16100E-7TL
Description
IC SDRAM 16MBIT 143MHZ 50TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Specifications of IS42S16100E-7TL
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
16M (1M x 16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
50-TSOPII
Organization
1Mx16
Density
16Mb
Address Bus
12b
Access Time (max)
6/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
50
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1071
IS42S16100E-7TL
IS42S16100E-7TL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S16100E-7TL
Manufacturer:
ISSI
Quantity:
6 545
Company:
Part Number:
IS42S16100E-7TL
Manufacturer:
ISSI
Quantity:
851
Company:
Part Number:
IS42S16100E-7TLI
Manufacturer:
ISSI
Quantity:
11 200
Company:
Part Number:
IS42S16100E-7TLI
Manufacturer:
ISSI
Quantity:
104
Part Number:
IS42S16100E-7TLI
Manufacturer:
ISSI
Quantity:
20 000
IS42S16100E, IC42S16100E
Note 1: A8,A9 = Don’t Care.
48
Write Cycle / Ping-Pong Operation
CAS latency = 2, burst length = 2
A0-A9
DQM
CKE
RAS
CAS
CLK
A10
A11
WE
DQ
CS
t
CKS
t
CS
T0
t
t
t
t
t
t
t
CS
CS
CS
AS
AS
t
t
AS
CKA
CH
CK
<
BANK 0
ACT 0
ROW
ROW
T1
(BANK 0 TO 1)
t
CHI
>
(BANK 0)
(BANK 0)
(BANK 0)
t
t
t
t
t
RRD
RCD
t
t
t
t
RAS
t
AH
AH
CH
CH
CH
AH
RC
T2
t
CL
t
t
CS
DS
<
AUTO PRE
<
COLUMN
WRITA 0
NO PRE
WRIT 0
BANK 0
D
T3
IN
0m
t
(1)
DH
>
>
t
DS
<
BANK 1
ACT 1
ROW
ROW
T4
D
IN
0m+1
t
>
DH
(BANK 1)
(BANK 1)
(BANK 1)
t
t
RCD
t
RAS
RC
t
DS
D
T5
IN
0m+2
t
DH
t
DS
Integrated Silicon Solution, Inc. — www.issi.com
D
T6
IN
0m+3
t
DH
t
DPL
t
DS
<
AUTO PRE
<
WRITA 1
COLUMN
NO PRE
BANK 1
WRIT 1
T7
D
IN
t
1m
DH
(1)
>
>
t
DS
BANK 0 OR 1
<
BANK 0
PRE 0
D
T8
IN
1m+1
t
DH
>
(BANK 0)
t
RP
t
DS
D
T9
IN
1m+2
t
DH
t
DS
T10
<
BANK 0
ACT 0
D
ROW
ROW
Undefined
Don't Care
IN
1m+3
>
t
DH
(BANK 0)
(BANK 0)
(BANK 0)
t
t
t
RCD
RAS
t
DPL
RC
t
CH
01/22/08
Rev. C