SIZ918DT-T1-GE3 Vishay/Siliconix, SIZ918DT-T1-GE3 Datasheet - Page 11

• Manufacturer Part Number: SIZ918DT-T1-GE3
• Description: MOSFET 30V 16A/28A 29/100W 12mohm / 3.7mohm@10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ918DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.012 Ohms
• Configuration: Dual
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR 6 x 5
• Power Dissipation: 100 W
• Part # Aliases: SIZ918DT-GE3

CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63783.
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.1
0.1
0.0001
1
0.0001
1
Duty Cycle = 0.5
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse
0.2
0.02
0.02
0.001
Single Pulse
0.05
For more information please contact:
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
This document is subject to change without notice.
0.001
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
New Product
0.1
[e-mail]
1
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
DM
100
Z
thJA
thJA
Vishay Siliconix
t
t
1
2
(t)
www.vishay.com/doc?91000
= 55 °C/W
SiZ918DT
www.vishay.com
1000
0.1
11