SIZ918DT-T1-GE3 Vishay/Siliconix, SIZ918DT-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SIZ918DT-T1-GE3
• Description: MOSFET 30V 16A/28A 29/100W 12mohm / 3.7mohm@10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ918DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.012 Ohms
• Configuration: Dual
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR 6 x 5
• Power Dissipation: 100 W
• Part # Aliases: SIZ918DT-GE3

SiZ918DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
8
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
I
D
= 20 A
On-Resistance vs. Drain Current
20
V
V
V
DS
GS
0.5
DS
20
Output Characteristics
= 15 V
Q
= 10 V thru 4 V
V
- Drain-to-Source Voltage (V)
g
GS
- Total Gate Charge (nC)
I
D
= 4.5 V
- Drain Current (A)
Gate Charge
40
V
DS
1.0
40
= 7.5 V
V
For more information please contact:
DS
V
60
GS
= 24 V
= 10 V
V
GS
1.5
60
= 3 V
80
This document is subject to change without notice.
2.0
100
80
New Product
[e-mail]
5000
4000
3000
2000
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
= 20 A
- 25
0.5
5
V
V
DS
T
GS
C
0
J
Transfer Characteristics
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.0
T
10
C
25
= 125 °C
C
Capacitance
iss
T
C
1.5
15
50
= 25 °C
75
S12-0543 Rev. A, 12-Mar-12
2.0
20
Document Number: 63783
www.vishay.com/doc?91000
V
100
GS
T
= 10 V
V
C
2.5
25
GS
= - 55 °C
125
= 4.5 V
150
3.0
30