SIZ918DT-T1-GE3 Vishay/Siliconix, SIZ918DT-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIZ918DT-T1-GE3
• Description: MOSFET 30V 16A/28A 29/100W 12mohm / 3.7mohm@10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ918DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.012 Ohms
• Configuration: Dual
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR 6 x 5
• Power Dissipation: 100 W
• Part # Aliases: SIZ918DT-GE3

SiZ918DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.014
0.012
0.010
0.008
0.006
10
60
50
40
30
20
10
8
6
4
2
0
0
0.0
0
0
I
D
V
V
GS
= 13.8 A
GS
On-Resistance vs. Drain Current
0.5
10
V
= 4.5 V
= 10 V
DS
3
V
DS
Output Characteristics
= 7.5 V
Q
- Drain-to-Source Voltage (V)
g
V
1.0
GS
20
I
- Total Gate Charge (nC)
D
V
Gate Charge
DS
- Drain Current (A)
= 10 V thru 4 V
6
= 15 V
1.5
30
For more information please contact:
9
V
2.0
40
DS
= 24 V
V
V
GS
GS
12
This document is subject to change without notice.
2.5
50
= 3 V
= 2 V
3.0
15
60
New Product
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1200
1000
800
600
400
200
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
20
16
12
8
4
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
I
D
-- 25
0.5
= 13.8 A
5
V
V
Transfer Characteristics
C
GS
DS
C
T
0
iss
1.0
oss
J
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
10
= 125 °C
V
Capacitance
25
GS
T
1.5
C
= 10 V; 4.5 V
= 25 °C
15
50
2.0
S12-0543 Rev. A, 12-Mar-12
75
Document Number: 63783
20
www.vishay.com/doc?91000
2.5
T
C
100
= - 55 °C
25
3.0
125
3.5
150
30