SIZ918DT-T1-GE3 Vishay/Siliconix, SIZ918DT-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIZ918DT-T1-GE3
• Description: MOSFET 30V 16A/28A 29/100W 12mohm / 3.7mohm@10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ918DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.012 Ohms
• Configuration: Dual
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR 6 x 5
• Power Dissipation: 100 W
• Part # Aliases: SIZ918DT-GE3

CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63783
S12-0543 Rev. A, 12-Mar-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.1
10
1
- 50
0.0
I
D
Source-Drain Diode Forward Voltage
- 25
= 250 µA
0.2
T
V
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
For more information please contact:
75
0.8
T
J
0.01
= 25 °C
100
0.1
100
10
1
0.1
Safe Operating Area, Junction-to-Ambient
1.0
This document is subject to change without notice.
Limited by R
* V
125
T
A
GS
= 25 °C
> minimum V
150
V
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
New Product
1
*
BVDSS Limited
GS
at which R
[e-mail]
DS(on)
10
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
40
30
20
10
is specified
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
100 μs
10 s
100 ms
1 ms
10 ms
1 s
DC
0.01
100
2
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
1
6
Vishay Siliconix
10
www.vishay.com/doc?91000
I
D
T
T
= 13.8 A
SiZ918DT
J
J
= 125 °C
= 25 °C
8
100
www.vishay.com
1000
10
5