SIZ918DT-T1-GE3 Vishay/Siliconix, SIZ918DT-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SIZ918DT-T1-GE3
• Description: MOSFET 30V 16A/28A 29/100W 12mohm / 3.7mohm@10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ918DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.012 Ohms
• Configuration: Dual
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR 6 x 5
• Power Dissipation: 100 W
• Part # Aliases: SIZ918DT-GE3

SiZ918DT
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
www.vishay.com
2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted)
For more information please contact:
b
V
Symbol
V
R
V
GS(th)
I
This document is subject to change without notice.
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
oss
DS
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
New Product
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
= 15 V, V
= 15 V, V
= 15 V, V
V
= 30 V, V
= 30 V, V
= 15 V, V
V
V
V
= 15 V, V
= 15 V, V
V
V
V
V
V
V
V
V
V
DS
V
V
DS
DS
GS
DS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
= 0 V, V
= V
= V
= 4.5 V, I
= 10 V, I
= 10 V, I
= 0 V, I
= 0 V, I
= 30 V, V
= 30 V, V
5 V, V
5 V, V
= 4.5 V, I
= 10 V, I
= 10 V, I
I
I
I
I
[e-mail]
D
D
D
D
Channel-1
Channel-2
Channel-1
Channel-2
f = 1 MHz
GS
Test Conditions
GS
GS
GS
= 250 µA
= 250 µA
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
, I
, I
= 4.5 V, I
= 10 V, I
= 4.5 V, I
= 0 V, T
= 0 V, T
D
D
= 10 V, I
GS
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
D
D
GS
GS
D
D
D
= 250 µA
= 250 µA
D
D
GS
GS
D
= 250 µA
= 250 µA
= 13.8 A
= 13.8 A
= 12.6 A
= ± 20 V
= 20 A
= 20 A
= 10 V
= 10 V
= 20 A
= 0 V
= 0 V
D
J
J
D
D
D
= 55 °C
= 55 °C
= 13.8 A
= 13.8 A
= 20 A
= 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
1.2
0.4
0.2
30
30
20
20
1
S12-0543 Rev. A, 12-Mar-12
Document Number: 63783
www.vishay.com/doc?91000
0.0100 0.0120
0.0030 0.0037
0.0120 0.0145
0.0035 0.0045
3830
Typ.
- 7.5
67.3
10.8
116
790
190
670
315
6.8
2.6
1.9
9.3
1.1
33
37
- 5
47
76
14
32
2
± 100
± 100
Max.
105
2.2
2.2
2.2
11
21
48
1
1
5
5
4
mV/°C
Unit
nA
µA
nC
pF


V
V
A
S