BSS83PH6327XT Infineon Technologies, BSS83PH6327XT Datasheet - Page 2

• Manufacturer Part Number: BSS83PH6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS83PH6327XT

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 330 mA
• Resistance Drain-source Rds (on): 2 Ohms at -4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 64 ns
• Gate Charge Qg: 2.38 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 71 ns
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BSS83P BSS83PH6327XTSA1 H6327

Rev. 1.5
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
( Pin 3 )
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
= -80 µA
= -60 V, V
= -60 V, V
= 0 V, I
= -20 V, V
= -4.5 V, I
= -10 V, I
2
cooling area
D
= -250 µA
D
D
GS
GS
DS
= -0.33 A
= -0.27 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 °C
= 125 °C
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
-60
-1
-
-
-
-
-
-
-
-
Values
Values
typ.
-1.5
-0.1
typ.
-10
-10
1.4
2
-
-
-
-
max.
max.
-100
-100
150
350
300
-2
-1
2012-03-30
3
2
-
BSS 83 P
Unit
V
µA
nA
W
Unit
K/W