STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 10

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
10/25
Figure 18. Switching losses vs gate resistance
E
400
300
200
100
(μJ)
500
0
0
(1)
V
V
I
DD
GS
D
=18 A
=400 V
=10 V
10
20
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
30
Eon
40
Eoff
Doc ID 022853 Rev 2
AM15325v1
R
G
(Ω)