STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 10
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STI34N65M5
Manufacturer Part Number
STI34N65M5
Description
MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
Manufacturer
STMicroelectronics
Datasheet
1.STI34N65M5.pdf
(25 pages)
Specifications of STI34N65M5
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
0.11 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
IPAK
Fall Time
7.5 ns
Gate Charge Qg
62.5 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
190 W
Rise Time
8.7 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STI34N65M5
Manufacturer:
STMicroelectronics
Quantity:
800
Electrical characteristics
1. Eon including reverse recovery of a SiC diode
10/25
Figure 18. Switching losses vs gate resistance
E
400
300
200
100
(μJ)
500
0
0
(1)
V
V
I
DD
GS
D
=18 A
=400 V
=10 V
10
20
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
30
Eon
40
Eoff
Doc ID 022853 Rev 2
AM15325v1
R
G
(Ω)