STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 24

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

Revision history
6
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Revision history
Table 16.
23-Feb-2012
15-Oct-2012
Date
Document revision history
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Revision
1
2
First release.
– Added package, mechanical data: I²PAKFP
– Updated
– Minor text changes.
– Curves inserted
Doc ID 022853 Rev 2
ratings,
Table 3: Thermal
Table 1: Device
summary,
data.
Changes
Table 2: Absolute maximum