STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 23

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Packaging mechanical data
Figure 32. Tape
Figure 33. Reel
A
T
REEL DIMENSIONS
K0
D
Top cover
tape
Full radius
B0
Doc ID 022853 Rev 2
User direction of feed
A0
B
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
P0
Access hole
At sl ot location
40mm min.
Tape slot
in core for
tape start 25 mm min.
width
P1
D
D1
C
P2
Bending radius
T
G measured at hub
F
N
E
AM08851v2
W
AM08852v2
23/25
R