STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 11

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
3
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 022853 Rev 2
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
Vgs
Vds
Id
10%Vds
90%Vds
90%Vgs
on
on
Vgs(I(t))
circuit
))
t
d
(v)
t
r
(v)
t
c
(off)
t
f
(i)
Inductive Load Turn - off
Test circuits
AM05540v1
10%Id
90%Id
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