STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 11
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STI34N65M5
Manufacturer Part Number
STI34N65M5
Description
MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
Manufacturer
STMicroelectronics
Datasheet
1.STI34N65M5.pdf
(25 pages)
Specifications of STI34N65M5
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
0.11 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
IPAK
Fall Time
7.5 ns
Gate Charge Qg
62.5 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
190 W
Rise Time
8.7 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STI34N65M5
Manufacturer:
STMicroelectronics
Quantity:
800
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
3
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 022853 Rev 2
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
Vgs
Vds
Id
10%Vds
90%Vds
90%Vgs
on
on
Vgs(I(t))
circuit
))
t
d
(v)
t
r
(v)
t
c
(off)
t
f
(i)
Inductive Load Turn - off
Test circuits
AM05540v1
10%Id
90%Id
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