STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 6
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STI34N65M5
Manufacturer Part Number
STI34N65M5
Description
MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
Manufacturer
STMicroelectronics
Datasheet
1.STI34N65M5.pdf
(25 pages)
Specifications of STI34N65M5
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
0.11 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
IPAK
Fall Time
7.5 ns
Gate Charge Qg
62.5 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
190 W
Rise Time
8.7 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STI34N65M5
Manufacturer:
STMicroelectronics
Quantity:
800
Electrical characteristics
6/25
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
t
c
SD
d
t
RRM
RRM
r
I
Q
Q
(off)
f
SD
t
t
(v)
rr
rr
(v)
(i)
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Parameter
Parameter
Doc ID 022853 Rev 2
I
I
V
I
V
(see
V
R
(see
Figure
SD
SD
SD
DD
DD
DD
G
= 28 A, V
= 28 A, di/dt = 100 A/µs
= 28 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure 21
Test conditions
Test conditions
24)
24)
GS
D
GS
j
and
= 150 °C
= 18 A,
= 0
= 10 V
Figure
24)
Min.
Min.
-
-
-
-
-
Typ.
Typ.
350
422
5.6
7.4
8.7
7.5
32
35
59
12
Max. Unit
Max. Unit
112
1.5
28
-
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A