STI34N65M5 STMicroelectronics, STI34N65M5 Datasheet - Page 6

• Manufacturer Part Number: STI34N65M5
• Description: MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
• Manufacturer: STMicroelectronics

Specifications of STI34N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.11 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: IPAK
• Fall Time: 7.5 ns
• Gate Charge Qg: 62.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 190 W
• Rise Time: 8.7 ns

Electrical characteristics
6/25
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
t
c
SD
d
t
RRM
RRM
r
I
Q
Q
(off)
f
SD
t
t
(v)
rr
rr
(v)
(i)
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Parameter
Parameter
Doc ID 022853 Rev 2
I
I
V
I
V
(see
V
R
(see
Figure
SD
SD
SD
DD
DD
DD
G
= 28 A, V
= 28 A, di/dt = 100 A/µs
= 28 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure 21
Test conditions
Test conditions
24)
24)
GS
D
GS
j
and
= 150 °C
= 18 A,
= 0
= 10 V
Figure
24)
Min.
Min.
-
-
-
-
-
Typ.
Typ.
350
422
5.6
7.4
8.7
7.5
32
35
59
12
Max. Unit
Max. Unit
112
1.5
28
-
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A