PSMN013-30MLC,115 NXP Semiconductors, PSMN013-30MLC,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN013-30MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 27 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 39 A
• Resistance Drain-source Rds (on): 16.9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 38 W
• Factory Pack Quantity: 1500

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN013-30MLC
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN013-30MLC
Symbol
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
GS
tot
ESD
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
source
source
source
gate
mounting base; connected to
drain
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
Package
Name
LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33);
4 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
pulsed; t
see
T
MM (JEDEC JESD22-A115)
T
pulsed; t
V
V
see
Rev. 4 — 15 June 2012
j
mb
mb
GS
GS
GS
sup
Simplified outline
= 25 °C
Figure 4
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
SOT1210 (LFPAK33)
p
p
≤ 10 µs; T
≤ 10 µs; T
1
mb
mb
j(init)
GS
2
= 25 °C; see
= 100 °C; see
= 50 Ω; unclamped;
Figure 2
= 25 °C; I
3
mb
mb
4
= 25 °C;
= 25 °C
D
= 39 A;
Figure 1
Figure 1
PSMN013-30MLC
Graphic symbol
mbb076
G
Min
-
-20
-
-
-
-
-55
-55
-
100
-
-
-
© NXP B.V. 2012. All rights reserved.
D
S
Version
SOT1210
Max
30
20
39
28
157
38
175
175
260
-
34
157
5.6
°C
°C
°C
V
Unit
V
V
A
A
A
W
A
A
mJ
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