PSMN013-30MLC,115 NXP Semiconductors, PSMN013-30MLC,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN013-30MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 27 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 39 A
• Resistance Drain-source Rds (on): 16.9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 38 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN013-30MLC
Product data sheet
Fig 12. Gate charge waveform definitions
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
C
C
C
003aaa508
003aaj409
oss
iss
rss
(V)
10
2
Rev. 4 — 15 June 2012
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain
V
(V)
(A)
I
GS
S
10
40
30
20
10
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
6 V
2
0.3
PSMN013-30MLC
T
j
= 150°C
4
V
DS
0.6
=
15 V
6
24 V
T
0.9
j
= 25 °C
© NXP B.V. 2012. All rights reserved.
8
003aaj408
003aaj410
V
SD
(nC)
Q
(V)
G
1.2
10
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