PSMN013-30MLC,115 NXP Semiconductors, PSMN013-30MLC,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN013-30MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 27 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 39 A
• Resistance Drain-source Rds (on): 16.9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 38 W
• Factory Pack Quantity: 1500

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN013-30MLC
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
(A)
10
10
I
10
10
D
10
10
10
-1
-2
-1
1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
10
-1
δ = 0.5
0.02
0.1
0.05
Thermal characteristics
0.2
single shot
-6
Parameter
thermal resistance from
junction to mounting base
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
10
-5
Limit R
All information provided in this document is subject to legal disclaimers.
10
DSon
1
-4
= V
Conditions
see
DS
Rev. 4 — 15 June 2012
/ I
D
Figure 5
10
-3
DC
10
10
-2
PSMN013-30MLC
Min
-
10
P
-1
100 μ s
10 ms
t
1 ms
100 ms
p
=10 μ s
V
t
Typ
3.8
DS
p
(V)
T
© NXP B.V. 2012. All rights reserved.
t
p
003aaj398
003aaj399
δ =
(s)
Max
3.99
t
T
p
t
10
1
2
K/W
Unit
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