PSMN013-30MLC,115 NXP Semiconductors, PSMN013-30MLC,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN013-30MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 27 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 39 A
• Resistance Drain-source Rds (on): 16.9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 38 W
• Factory Pack Quantity: 1500

NXP Semiconductors
Table 6.
PSMN013-30MLC
Product data sheet
Symbol
t
t
t
t
Q
Source-drain diode
V
t
Q
t
t
d(on)
r
d(off)
f
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
40
30
20
10
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise
time
reverse recovery fall
time
4.5
1
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
3.5
…continued
2
3
V
Conditions
V
R
V
T
I
see
I
V
V
V
GS
All information provided in this document is subject to legal disclaimers.
S
S
j
DS
GS
DS
GS
DS
003aaj400
V
G(ext)
= 25 °C
= 10 A; V
= 10 A; dI
(V) =
DS
Figure 15
= 15 V; R
= 15 V
= 15 V; see
= 0 V; V
= 0 V; I
(V)
2.4
2.2
2.8
2.6
= 5 Ω
3
4
Rev. 4 — 15 June 2012
S
GS
S
DS
/dt = -100 A/µs; V
= 10 A; dI
L
= 0 V; T
= 1.5 Ω; V
= 15 V; f = 1 MHz;
Figure 16
Fig 7.
j
S
= 25 °C;
/dt = -100 A/µs;
R
GS
(mΩ)
DSon
50
40
30
20
10
= 4.5 V;
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
GS
0
= 0 V;
4
PSMN013-30MLC
Min
-
-
-
-
-
-
-
-
-
-
8
Typ
7
9.8
9.6
5.5
3.7
0.86
13.4
6.6
8.6
4.8
12
© NXP B.V. 2012. All rights reserved.
V
003aaj401
GS
Max
-
-
-
-
-
1.1
-
-
-
-
(V)
16
ns
ns
Unit
ns
ns
ns
nC
V
nC
ns
ns
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