PSMN013-30MLC,115 NXP Semiconductors, PSMN013-30MLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN013-30MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 27 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 39 A
• Resistance Drain-source Rds (on): 16.9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 38 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN013-30MLC
Product data sheet
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(S)
g
50
40
30
20
10
fs
50
40
30
20
10
0
0
drain current; typical values
of drain current; typical values
Forward transconductance as a function of
0
5
2.8
10
15
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
3
20
25
30
35
V
All information provided in this document is subject to legal disclaimers.
GS
003aaj402
003aaj406
I
I
(V) = 10
D
D
(A)
(A)
3.5
4.5
40
45
Rev. 4 — 15 June 2012
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
a
D
1.5
0.5
40
30
20
10
0
2
1
0
-60
function of gate-source voltage; typical values
factor as a function of junction temperature
Transfer characteristics; drain current as a
0
1
0
PSMN013-30MLC
T
j
= 150 °C
60
2
T
j
= 25 °C
10V
120
3
© NXP B.V. 2012. All rights reserved.
V
V
GS
003aaj403
003aaj407
T
GS
j
=4.5V
(°C)
(V)
180
4
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