FDD3672_F085 Fairchild Semiconductor, FDD3672_F085 Datasheet - Page 6

• Manufacturer Part Number: FDD3672_F085
• Description: MOSFET 100V NChannel UniFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDD3672_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 44 A
• Resistance Drain-source Rds (on): 24 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 144 W
• Factory Pack Quantity: 2500

FDD3672_F085 Rev. C
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
Figure 13. Capacitance vs Drain to Source
1000
100
1.4
1.2
1.0
0.8
0.6
0.4
10
0.1
-80
f = 1MHz
V
GS
-40
= 0V
T
Junction Temperature
V
J
, JUNCTION TEMPERATURE
DS
, DRAIN TO SOURCE VOLTAGE
0
Voltage
1
40
80
10
120
(
o
C
V
I
D
)
GS
= 250 μ
160
(
=
V
V
C
)
C
DS
C
rss
A
iss
oss
200
80
6
Figure 14. Gate Charge vs Gate to Source Voltage
Breakdown Voltage vs Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
10
Figure 12. Normalized Drain to Source
8
6
4
2
0
0
-80
I
D
I
= 44A
D
= 5mA
-40
T
5
J
, JUNCTION TEMPERATURE
Q
g
0
, GATE CHARGE(nC)
10
40
V
DD
= 40 V
V
15
80
DD
= 50 V
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120
V
DD
20
(
= 60V
o
C
160
)
25
200