BUK7107-40ATC /T3 NXP Semiconductors, BUK7107-40ATC /T3 Datasheet - Page 10

• Manufacturer Part Number: BUK7107-40ATC /T3
• Description: MOSFET TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-40ATC /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 140 A
• Resistance Drain-source Rds (on): 0.007 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-426
• Fall Time: 6800 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 272 W
• Rise Time: 5700 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 8900 ns
• Part # Aliases: BUK7107-40ATC,118

NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Drain-source clamping voltage as a function of
V DSR(CL)
(V)
120
100
52
51
50
49
(A)
I D
80
60
40
20
0
function of gate-source voltage; typical values
drain current; typical values
0
0
2
175 °C
T j = 25 °C
- 55 °C
2
4
175 °C
6
4
T j = 25 °C
V GS (V)
8
I D (A)
03ni61
03ni70
10
Rev. 02 — 6 February 2009
6
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Drain-source clamping voltage as a function of
V DSR(CL)
V GS
(V)
(V)
10
8
6
4
2
0
56
52
48
44
40
gate charge; typical values
gate-source current; typical values
0
N-channel TrenchPLUS standard level FET
0
175 °C
BUK7107-40ATC
40
1
T j = 25 °C
14 V
V DS = 32 V
80
2
-
-I GS(CL) (mA)
Q G (nC)
55 °C
© NXP B.V. 2009. All rights reserved.
03ni71
03ni62
120
3
10 of 15