BUK7107-40ATC /T3 NXP Semiconductors, BUK7107-40ATC /T3 Datasheet - Page 10
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BUK7107-40ATC /T3
Manufacturer Part Number
BUK7107-40ATC /T3
Description
MOSFET TRENCHPLUS MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7107-40ATC_T3.pdf
(15 pages)
Specifications of BUK7107-40ATC /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
140 A
Resistance Drain-source Rds (on)
0.007 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-426
Fall Time
6800 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
272 W
Rise Time
5700 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
8900 ns
Part # Aliases
BUK7107-40ATC,118
NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Drain-source clamping voltage as a function of
V DSR(CL)
(V)
120
100
52
51
50
49
(A)
I D
80
60
40
20
0
function of gate-source voltage; typical values
drain current; typical values
0
0
2
175 °C
T j = 25 °C
- 55 °C
2
4
175 °C
6
4
T j = 25 °C
V GS (V)
8
I D (A)
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Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Drain-source clamping voltage as a function of
V DSR(CL)
V GS
(V)
(V)
10
8
6
4
2
0
56
52
48
44
40
gate charge; typical values
gate-source current; typical values
0
N-channel TrenchPLUS standard level FET
0
175 °C
BUK7107-40ATC
40
1
T j = 25 °C
14 V
V DS = 32 V
80
2
-
-I GS(CL) (mA)
Q G (nC)
55 °C
© NXP B.V. 2009. All rights reserved.
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