BUK7107-40ATC /T3 NXP Semiconductors, BUK7107-40ATC /T3 Datasheet - Page 7

no-image

BUK7107-40ATC /T3

Manufacturer Part Number
BUK7107-40ATC /T3
Description
MOSFET TRENCHPLUS MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7107-40ATC /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
140 A
Resistance Drain-source Rds (on)
0.007 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-426
Fall Time
6800 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
272 W
Rise Time
5700 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
8900 ns
Part # Aliases
BUK7107-40ATC,118
NXP Semiconductors
Table 6.
BUK7107-40ATC_2
Product data sheet
Symbol
t
t
t
t
L
L
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
D
S
SD
r
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
…continued
Conditions
V
R
from upper edge of drain mounting base to
centre of die; T
from source lead to source bond pad;
T
I
see
I
V
S
S
j
DS
G(ext)
DS
= 25 °C
= 25 A; V
= 20 A; dI
Figure 19
= 30 V; R
= 30 V; T
= 1 kΩ; T
Rev. 02 — 6 February 2009
GS
S
/dt = -100 A/µs; V
j
L
= 25 °C
= 0 V; T
j
= 1.2 Ω; V
= 25 °C
j
= 25 °C
j
= 25 °C;
GS
= 10 V;
GS
= -10 V;
N-channel TrenchPLUS standard level FET
BUK7107-40ATC
Min
-
-
-
-
-
-
-
-
-
Typ
2
5.7
8.9
6.8
2.5
7.5
0.85
80
200
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
-
-
-
1.2
-
-
Unit
µs
µs
µs
µs
nH
nH
V
ns
nC
7 of 15

Related parts for BUK7107-40ATC /T3