BUK7107-40ATC /T3 NXP Semiconductors, BUK7107-40ATC /T3 Datasheet - Page 3

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BUK7107-40ATC /T3

Manufacturer Part Number
BUK7107-40ATC /T3
Description
MOSFET TRENCHPLUS MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7107-40ATC /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
140 A
Resistance Drain-source Rds (on)
0.007 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-426
Fall Time
6800 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
272 W
Rise Time
5700 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
8900 ns
Part # Aliases
BUK7107-40ATC,118
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7107-40ATC_2
Product data sheet
Symbol
V
V
V
I
I
P
I
I
V
T
T
Source-drain diode
I
I
Clamping
E
Electrostatic Discharge
V
D
DM
DG(CL)
GS(CL)
S
SM
stg
j
DS
DGS
GS
tot
isol(FET-TSD)
DS(CL)S
esd
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
drain-gate clamping
current
gate-source clamping
current
FET to temperature
sense diode isolation
voltage
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source clamping
energy
electrostatic discharge
voltage
[1]
[2]
[3]
Voltage is limited by clamping.
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Conditions
T
I
T
see
T
T
T
pulsed; t
continuous
pulsed; t
T
T
t
I
unclamped; T
HBM; C = 100 pF; R = 1.5 kΩ
DG
p
D
j
mb
mb
mb
mb
mb
mb
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 75 A; V
= 250 µA
Figure
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C;
= 25 °C;
p
p
Rev. 02 — 6 February 2009
= 5 ms; δ = 0.01
= 5 ms; δ = 0.01
3;
DS
j
≤ 175 °C;
j(init)
p
GS
≤ 40 V; V
≤ 10 µs; pulsed; see
GS
Figure 1
= 10 V; see
= 25 °C
= 10 V; see
mb
= 25 °C
GS
= 10 V; R
Figure
Figure 2
N-channel TrenchPLUS standard level FET
Figure 3
GS
2;
= 10 kΩ;
BUK7107-40ATC
[1]
[2]
[3]
[3]
[2]
[3]
-20
-
-55
Min
-
-
-
-
-
-
-
-
-
-100
-55
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
40
40
20
140
75
75
560
272
50
10
50
100
175
175
140
75
560
1.4
6
Unit
V
V
V
A
A
A
A
W
mA
mA
mA
V
°C
°C
A
A
A
J
kV
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